 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDP4020P September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. Features * -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V RDS(on) = 0.11 @ VGS = -2.5 V. * Critical DC electrical parameters specified at elevated temperature. * High density cell design for extremely low RDS(on). * TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. * 175C maximum junction temperature rating. S G D A bsolute M axim um Ratings Sym bol V DSS V G SS ID PD T J , T STG R JC R JA Drain-S ource V oltage G ate-S ource V oltage Drain Current - Continuous - P ulsed T A = 25C unless otherw ise noted Param eter FD P4020P -20 8 -16 -48 37.5 FD B 4020P U nits V V A W W / C C C/W C/W Total P ower Dissipation @ T C = 25 C Derate above 25 C O perating and S torage Junction Tem perature Range 0.25 -65 to +175 Therm al C haracteristics Therm al Resistance, Junction-to- Case Therm al Resistance, Junction-to- A m bient (N ote 1) 4 62.5 40 Package O utlines and O rdering Inform ation D evice M arking FDP 4020P D evice FDP 4020P R eel Size 13'' Tape W idth 12m m Q uantity 2500 units 2000 Fairchild Semiconductor International FDP4020P Rev. B FDP4020P Electrical Characteristics Symbol BVDSS BVDSS T J IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Test Conditions Min -20 Typ Max Units V Off Characteristics Drain-Source Breakdown VGS = 0 V, ID = -250 A Voltage Breakdown Voltage ID = -250 A, Referenced to 25C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) -28 -1 100 -100 mV/C A nA nA VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V On Characteristics VGS(th) VGS(th) T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125C VGS = -2.5 V,ID = -7 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A -0.4 -0.58 2 0.068 0.098 0.096 -1 V mV/C 0.08 0.13 0.110 ID(on) gFS -20 14 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 665 270 70 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8 24 50 29 16 38 80 45 13 ns ns ns ns nC nC nC VDS = -5 V, ID = -16 A, VGS = -4.5 V 9.5 1.3 2.2 Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16 A (Note 2) (Note 2) (Note 2) -16 -48 -1.2 A V Notes: 1. RJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDP4020P Rev. B FDP4020P Typical Characteristics 40 -4.0V -3.5V 24 -3.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) 32 1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V 16 -2.5V 8 -2.0V 0 0 2 4 6 8 10 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = -16A VGS = -4.5V ID = -8A 0.16 0.12 TA = 125 C 0.08 TA = 25 C o o 0.04 0 125 150 175 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 VDS = -5V -ID, DRAIN CURRENT (A) 16 TA = -55 C 25 C 125 C o o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 12 TA = 125 C 25 C -55 C o o o 8 0.01 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.0001 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4020P Rev. B FDP4020P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 4 (continued) VDS = -5V -10V 1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V -15V 3 2 1 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100s 1ms Figure 8. Capacitance Characteristics. 1000 SINGLE PULSE 800 POWER (W) RJC = 4 C/W TA = 25 C 600 o o 10 10ms DC 100ms 1 400 VGS = -4.5V SINGLE PULSE RJC = 4 C/W TA = 25 C o o 200 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 R JC (t) = r(t) * R JC R JC = 4C/W 0.1 0.2 0.2 0.05 Single Pulse P(pk) t1 t2 0.1 TJ - TA = P * R JC (t) Duty Cycle, D = t 1 / t 2 0.05 0.0001 0.001 0.01 t1 , TIME (sec) 0.1 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP4020P Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
Price & Availability of FDP4020P00
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |